SI1406DH-T1-GE3
MOSFET N-CH 20V 3.1A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Series N-Channel Power MOSFET, part number SI1406DH-T1-GE3. This device features a 20V drain-source voltage and a continuous drain current of 3.1A at 25°C. The SI1406DH-T1-GE3 is housed in a compact SC-70-6 package and supports surface mount assembly. Key electrical characteristics include a maximum on-resistance of 65mOhm at 3.9A and 4.5V Vgs, with a gate charge of 7.5 nC at 4.5V. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |