SI1406DH-T1-E3
MOSFET N-CH 20V 3.1A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1406DH-T1-E3 is a 20V N-Channel MOSFET designed for demanding applications. This component offers a continuous drain current of 3.1A (Ta) with a maximum power dissipation of 1W (Ta) in an SC-70-6 package. Key electrical characteristics include a low on-resistance of 65mOhm at 3.9A and 4.5V, and a gate charge of 7.5 nC at 4.5V. The device operates with a gate-source voltage range of ±8V and a threshold voltage of 1.2V at 250µA. Drive voltages for optimal Rds On performance are 1.8V and 4.5V. This surface mount device is suitable for use in consumer electronics and industrial power management applications. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
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