SI1405BDH-T1-E3
MOSFET P-CH 8V 1.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI1405BDH-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 1.6A at 25°C (Tc). The Rds(On) is specified at a maximum of 112mOhm at 2.8A and 4.5V Vgs. Drive voltages range from 1.8V to 4.5V for optimal Rds(On) performance. The gate charge (Qg) is a maximum of 5.5 nC at 4.5V Vgs, and input capacitance (Ciss) is a maximum of 305 pF at 4V Vds. This MOSFET is housed in a compact SC-70-6 package, suitable for surface mount assembly. The maximum power dissipation is 1.47W (Ta) and 2.27W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component finds application in power management for consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta), 2.27W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 4 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
