SI1403CDL-T1-GE3
MOSFET P-CH 20V 2.1A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1403CDL-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.1A at 25°C (Tc). With a low on-resistance of 140mOhm maximum at 1.6A and 4.5V gate-source voltage, it offers reduced conduction losses. The device is available in a compact SC-70-6 (SOT-363) surface-mount package, suitable for space-constrained designs. Key electrical parameters include a maximum gate charge (Qg) of 8 nC at 4.5V and an input capacitance (Ciss) of 281 pF at 10V. Power dissipation is rated at 600mW (Ta) and 900mW (Tc). This MOSFET is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta), 900mW (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 281 pF @ 10 V |