SI1403BDL-T1-GE3
MOSFET P-CH 20V 1.5A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI1403BDL-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 1.5 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 150 mOhm when drawing 1.5 A with a 4.5 V gate-source voltage (Vgs). The gate charge (Qg) is 4.5 nC at 4.5 V Vgs, indicating fast switching characteristics. It has a maximum power dissipation of 625 mW when mounted on a suitable PCB. The SI1403BDL-T1-GE3 is housed in a compact SC-70-6 (SOT-363) surface mount package, suitable for high-density designs in sectors such as consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
