SI1403BDL-T1-BE3
MOSFET P-CH 20V 1.4A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SI1403BDL-T1-BE3, from the TrenchFET® series. This device features a 20V drain-to-source voltage and a continuous drain current of 1.4A at 25°C. With a maximum power dissipation of 568mW (Ta) and a low on-resistance of 150mOhm at 1.5A and 4.5V Vgs, it is suitable for applications requiring efficient power switching. The SC-70-6 package facilitates surface mounting in compact designs. Key parameters include a gate charge of 4.5 nC at 4.5V Vgs and a threshold voltage of 1.3V at 250µA. Operating temperature range is -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 568mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
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