SI1400DL-T1-GE3
MOSFET N-CH 20V 1.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI1400DL-T1-GE3, offers a 20 V drain-source voltage and 1.6 A continuous drain current at 25°C. This surface mount device features a low ON-resistance of 150 mOhm maximum at 1.7 A and 4.5 V Vgs, with a gate charge of 4 nC maximum at 4.5 V. Its SC-70-6 (SOT-363) package ensures efficient thermal performance with a maximum power dissipation of 568 mW (Ta). Designed for optimal switching characteristics, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power management, consumer electronics, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 568mW (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
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