SI1400DL-T1-E3
MOSFET N-CH 20V 1.6A SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1400DL-T1-E3 is an N-Channel Power MOSFET designed for efficient power management applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 1.6A (Ta) at 25°C. The low on-resistance (Rds On) of 150mOhm at 1.7A and 4.5V Vgs, coupled with a low gate charge of 4nC at 4.5V Vgs, ensures minimal conduction and switching losses. The MOSFET operates with a gate-source voltage range of ±12V, and a typical threshold voltage (Vgs(th)) of 600mV. Manufactured with TrenchFET® technology for enhanced performance, it is packaged in a compact SC-70-6 (SOT-363) surface-mount case. The maximum power dissipation is 568mW (Ta). This component is suitable for use in consumer electronics, industrial automation, and power supply designs. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 568mW (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
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