SI1330EDL-T1-E3
MOSFET N-CH 60V 240MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel power MOSFET, part number SI1330EDL-T1-E3. This device features a 60V drain-to-source voltage and a continuous drain current of 240mA at 25°C. With a maximum on-resistance of 2.5 Ohms at 250mA and 10V Vgs, it offers efficient switching. The SC-70-3 package facilitates surface mounting, and the device operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge of 0.6 nC at 4.5V and a threshold voltage of 2.5V at 250µA. This MOSFET is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
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