SI1315DL-T1-GE3
MOSFET P-CH 8V 900MA SOT323Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1315DL-T1-GE3 is a P-channel TrenchFET® MOSFET designed for demanding power management applications. This component features an 8V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 900mA at 25°C (Tc). It offers a low on-resistance of 336mOhm at 800mA and 4.5V Vgs. The device supports gate drive voltages from 1.8V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. Key characteristics include a gate charge (Qg) of 3.4 nC at 4.5V and an input capacitance (Ciss) of 112 pF at 4V. With a maximum power dissipation of 300mW (Ta) or 400mW (Tc), it is suitable for operation across a wide temperature range of -50°C to 150°C. Packaged in an SC-70-3 (SOT-323) surface-mount configuration and supplied on tape and reel, this MOSFET finds application in areas such as battery-powered devices and general-purpose switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Rds On (Max) @ Id, Vgs | 336mOhm @ 800mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta), 400mW (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 112 pF @ 4 V |
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