SI1307EDL-T1-GE3
MOSFET P-CH 12V 850MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel Power MOSFET, part number SI1307EDL-T1-GE3, features a 12V drain-source voltage and a continuous drain current of 850mA at 25°C. This device is housed in an SC-70-3 package, suitable for surface mount applications. The MOSFET exhibits a maximum on-resistance of 290mOhm at 1A drain current and 4.5V gate-source voltage, with drive voltage requirements of 1.8V to 4.5V. Key parameters include a gate charge of 5nC at 4.5V and a maximum power dissipation of 290mW. The SI1307EDL-T1-GE3 operates across a temperature range of -55°C to 150°C. Its specifications make it suitable for various applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Ta) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
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