SI1307EDL-T1-E3
MOSFET P-CH 12V 850MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number SI1307EDL-T1-E3, features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 850mA at 25°C. This surface mount device, housed in an SC-70-3 package, offers a maximum power dissipation of 290mW (Ta) and a low on-resistance (Rds On) of 290mOhm at 1A, 4.5V. The device operates with a gate-source voltage (Vgs) range of ±8V and a threshold voltage (Vgs(th)) of 450mV (typical) at 250µA. Gate charge (Qg) is specified at 5 nC maximum at 4.5V. This MOSFET is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Ta) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
Request a Quote
Clients Also Buy
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SI3442CDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP
