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SI1307DL-T1-E3

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SI1307DL-T1-E3

MOSFET P-CH 12V 850MA SC70-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SI1307DL-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This surface mount component offers a 12V drain-source voltage (Vdss) and a continuous drain current capability of 850mA at 25°C. With a maximum power dissipation of 290mW, it is well-suited for power management in portable electronics and industrial control systems. The device features a low on-resistance of 290mOhm at 1A and 4.5V, achieved through advanced trench technology. Gate drive voltages range from 1.8V to 4.5V, with a maximum gate charge of 5 nC at 4.5V. The SC-70-3 package ensures a compact footprint for high-density designs, operating across a wide temperature range of -55°C to 150°C. This component is supplied in tape and reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C850mA (Ta)
Rds On (Max) @ Id, Vgs290mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)290mW (Ta)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Supplier Device PackageSC-70-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V

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