SI1305DL-T1-GE3
MOSFET P-CH 8V 0.86A SC-70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel Trench MOSFET, part number SI1305DL-T1-GE3, offers an 8V drain-source voltage and 860mA continuous drain current at 25°C. This surface mount device, packaged in an SC-70-3 (SOT-323) case, dissipates up to 290mW. Key electrical characteristics include a maximum Rds(on) of 280mOhm at 1A, 4.5V, and a typical gate charge of 4nC at 4.5V. The threshold voltage is specified at a minimum of 450mV at 250µA. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in consumer electronics and industrial control systems. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-3 |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |