SI1305DL-T1-E3
MOSFET P-CH 8V 860MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1305DL-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management in various applications. This component features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 860mA at 25°C, with a maximum power dissipation of 290mW. The Rds(On) is rated at a maximum of 280mOhm at 1A and 4.5V Vgs. It operates with a gate-source voltage range of ±8V and a threshold voltage (Vgs(th)) of 450mV at 250µA. The device is available in an SC-70-3 surface mount package, supplied on tape and reel. This MOSFET is suitable for use in consumer electronics, portable devices, and battery-powered systems requiring low on-resistance and efficient switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
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