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SI1305DL-T1-E3

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SI1305DL-T1-E3

MOSFET P-CH 8V 860MA SC70-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI1305DL-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management in various applications. This component features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 860mA at 25°C, with a maximum power dissipation of 290mW. The Rds(On) is rated at a maximum of 280mOhm at 1A and 4.5V Vgs. It operates with a gate-source voltage range of ±8V and a threshold voltage (Vgs(th)) of 450mV at 250µA. The device is available in an SC-70-3 surface mount package, supplied on tape and reel. This MOSFET is suitable for use in consumer electronics, portable devices, and battery-powered systems requiring low on-resistance and efficient switching.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C860mA (Ta)
Rds On (Max) @ Id, Vgs280mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)290mW (Ta)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Supplier Device PackageSC-70-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)8 V
Gate Charge (Qg) (Max) @ Vgs4 nC @ 4.5 V

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