SI1304BDL-T1-GE3
MOSFET N-CH 30V 900MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1304BDL-T1-GE3 TrenchFET® series N-Channel MOSFET. This 30V device features a continuous drain current of 900mA at 25°C (Tc) and a maximum Rds On of 270mOhm at 900mA, 4.5V. Designed for efficient switching, it offers low gate charge of 2.7 nC at 4.5V and input capacitance of 100 pF at 15V. Power dissipation is rated at 340mW (Ta) and 370mW (Tc). The SC-70-3 package is suitable for surface mounting. This component is commonly utilized in portable electronics, power management, and automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 900mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 340mW (Ta), 370mW (Tc) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 15 V |
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