SI1304BDL-T1-E3
MOSFET N-CH 30V 900MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SI1304BDL-T1-E3, offers a 30V drain-source voltage and a continuous drain current of 900mA at 25°C (Tc). This device features a maximum on-resistance of 270mOhm at 900mA and 4.5V Vgs. The SC-70-3 package is suitable for surface mounting and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 2.7 nC at 4.5V and input capacitance of 100 pF at 15V. Power dissipation is rated at 340mW (Ta) and 370mW (Tc). This component finds application in power management and switching circuits across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 900mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 340mW (Ta), 370mW (Tc) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 15 V |
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