SI1303EDL-T1-E3
MOSFET P-CH 20V 670MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number SI1303EDL-T1-E3, features a 20V drain-source breakdown voltage and a continuous drain current of 670mA (Ta). This device offers a maximum on-resistance of 430mOhm at 1A and 4.5V Vgs, with a gate charge of 2.5 nC at 4.5V. It operates with a threshold voltage of 600mV (Max) at 250µA and supports gate-source voltages up to ±12V. The SI1303EDL-T1-E3 is housed in an SC-70-3 surface mount package with a power dissipation of 290mW (Ta). This component is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 670mA (Ta) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
