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SI1303EDL-T1-E3

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SI1303EDL-T1-E3

MOSFET P-CH 20V 670MA SC70-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number SI1303EDL-T1-E3, features a 20V drain-source breakdown voltage and a continuous drain current of 670mA (Ta). This device offers a maximum on-resistance of 430mOhm at 1A and 4.5V Vgs, with a gate charge of 2.5 nC at 4.5V. It operates with a threshold voltage of 600mV (Max) at 250µA and supports gate-source voltages up to ±12V. The SI1303EDL-T1-E3 is housed in an SC-70-3 surface mount package with a power dissipation of 290mW (Ta). This component is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C670mA (Ta)
Rds On (Max) @ Id, Vgs430mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)290mW (Ta)
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Supplier Device PackageSC-70-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 4.5 V

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