SI1303DL-T1-E3
MOSFET P-CH 20V 670MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1303DL-T1-E3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This component features a Drain to Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 670 mA at 25°C (Ta). The Rds On is specified at a maximum of 430 mOhm at 1 A drain current and 4.5 V gate-source voltage, with drive voltages of 2.5 V and 4.5 V. The device has a low Gate Charge (Qg) of 2.2 nC at 4.5 V, contributing to fast switching performance. With a maximum power dissipation of 290 mW (Ta), it is suitable for operation across an extended temperature range of -55°C to 150°C. The SC-70-3 package facilitates surface mounting, making it ideal for compact designs in industries such as consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 670mA (Ta) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 290mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.5 V |
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