SI1302DL-T1-BE3
MOSFET N-CH 30V 600MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, part number SI1302DL-T1-BE3, features a 30V drain-source breakdown voltage and a continuous drain current capability of 600mA at 25°C. This device offers a low on-resistance of 480mOhm maximum at 600mA, 10V. The SI1302DL-T1-BE3 is housed in an SC-70-3 (SOT-323) surface-mount package, dissipating up to 280mW at 25°C. Key electrical parameters include a gate charge of 1.4 nC maximum at 10V and a gate threshold voltage of 3V at 250µA. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management and signal switching applications within the consumer electronics, industrial control, and automotive sectors. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-70-3 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
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