SI1300BDL-T1-GE3
MOSFET N-CH 20V 400MA SC70-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1300BDL-T1-GE3 is a TrenchFET® series N-Channel Power MOSFET designed for efficient power switching applications. This device features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 400mA at 25°C (Tc). With a maximum on-resistance (Rds On) of 850mOhm at 250mA and 4.5V gate-source voltage (Vgs), it offers low conduction losses. The MOSFET utilizes a surface mount SC-70-3 package, suitable for space-constrained designs. Key parameters include a gate charge (Qg) of 0.84 nC at 4.5V and an input capacitance (Ciss) of 35pF at 10V. It operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 190mW (Ta) or 200mW (Tc). This component is commonly found in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 250mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 190mW (Ta), 200mW (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.84 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 35 pF @ 10 V |
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