SI1073X-T1-GE3
MOSFET P-CH 30V 0.98A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1073X-T1-GE3 is a P-Channel TrenchFET® MOSFET with a 30V drain-source voltage and a continuous drain current of 980mA at 25°C. This surface-mount device, packaged in an SC-89 (SOT-563F), offers a maximum on-resistance of 173mOhm at 980mA and 10V Vgs. Key parameters include a gate charge of 9.45nC and input capacitance of 265pF. Operating within a temperature range of -55°C to 150°C, the SI1073X-T1-GE3 is suitable for applications in consumer electronics and industrial automation. The device supports drive voltages from 4.5V to 10V and has a ±20V maximum gate-source voltage. Power dissipation is rated at 236mW.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 980mA (Ta) |
| Rds On (Max) @ Id, Vgs | 173mOhm @ 980mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 15 V |