SI1072X-T1-GE3
MOSFET N-CH 30V SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel TrenchFET® SI1072X-T1-GE3. This surface mount device features a 30V drain-source voltage and a continuous drain current of 1.3A at 25°C ambient. The Rds On is a maximum of 93 mOhm at 1.3A and 10V gate-source voltage. Key parameters include a maximum gate charge of 8.3 nC at 10V and input capacitance of 280 pF at 15V. The device operates within a temperature range of -55°C to 150°C. It is supplied in an SC-89 (SOT-563F) package, delivered on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 93mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 15 V |
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