SI1071X-T1-GE3
MOSFET P-CH 30V 0.96A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1071X-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for efficient power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 960mA at 25°C. With a maximum On-Resistance (Rds On) of 167mOhm at 960mA and 10V gate-source voltage, it offers low conduction losses. The device is housed in an SC-89 (SOT-563F) surface-mount package, suitable for compact designs. Key electrical parameters include a maximum power dissipation of 236mW (Ta) and a gate charge (Qg) of 13.3 nC at 10V. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 960mA (Ta) |
| Rds On (Max) @ Id, Vgs | 167mOhm @ 960mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 1.45V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 15 V |
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