SI1071X-T1-E3
MOSFET P-CH 30V 0.96A SOT563FManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI1071X-T1-E3, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 960mA at 25°C (Ta). This device features a maximum on-resistance of 167mOhm at 960mA drain current and 10V gate-source voltage. The SI1071X-T1-E3 is housed in an SC-89 (SOT-563F) surface-mount package. It is suitable for applications requiring efficient switching and power management. Key electrical characteristics include a gate charge of 13.3 nC maximum at 10V Vgs and an input capacitance of 315 pF maximum at 15V Vds. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging. This component finds use in various industrial and consumer electronics applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 960mA (Ta) |
| Rds On (Max) @ Id, Vgs | 167mOhm @ 960mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 1.45V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 15 V |
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