SI1070X-T1-E3
MOSFET N-CH 30V 1.2A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1070X-T1-E3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.2A at 25°C. The device offers a low on-resistance (Rds(on)) of 99mOhm maximum at 1.2A and 4.5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 1.55V maximum at 250µA. Drive voltages are specified as 2.5V minimum and 4.5V maximum for optimal Rds(on). Key parameters include a maximum input capacitance (Ciss) of 385pF at 15V and a gate charge (Qg) of 8.3nC maximum at 5V. With a maximum power dissipation of 236mW (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for advanced power management solutions. It is supplied in an SC-89 (SOT-563F) package, enabling compact designs in portable electronics, battery management, and general-purpose power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 1.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 1.55V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 385 pF @ 15 V |
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