SI1067X-T1-GE3
MOSFET P-CH 20V 1.06A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1067X-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.06A at 25°C, with a maximum power dissipation of 236mW. The on-resistance (Rds On) is specified at 150mOhm maximum at 1.06A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 9.3 nC maximum at 5V and input capacitance (Ciss) of 375 pF maximum at 10V. It operates over a temperature range of -55°C to 150°C. The SI1067X-T1-GE3 is supplied in an SC-89 (SOT-563F) surface-mount package, making it suitable for compact designs in consumer electronics and industrial automation. Drive voltages range from 1.8V to 4.5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.06A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.06A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 10 V |