SI1065X-T1-GE3
MOSFET P-CH 12V 1.18A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, SI1065X-T1-GE3, offers a 12V drain-source voltage and a continuous drain current of 1.18A. This surface mount device features a maximum power dissipation of 236mW at 25°C ambient. The Rds On is specified at 156mOhm maximum at 1.18A and 4.5V gate-source voltage. The MOSFET utilizes a P-Channel Metal Oxide technology and is housed in an SC-89 (SOT-563F) package, supplied on tape and reel. Key parameters include a gate charge of 10.8nC maximum at 5V and input capacitance of 480pF maximum at 6V. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.18A (Ta) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.18A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 6 V |
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