SI1058X-T1-GE3
MOSFET N-CH 20V SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1058X-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency performance. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 1.3A at 25°C ambient. The On-Resistance (Rds(on)) is specified at a maximum of 91mOhm at 1.3A and 4.5V gate-source voltage. Its low gate charge of 5.9 nC at 5V and input capacitance of 380 pF at 10V contribute to efficient switching characteristics. The device is housed in a compact SC-89 (SOT-563F) surface-mount package, offering a power dissipation of 236mW at 25°C ambient. The SI1058X-T1-GE3 is suitable for applications in consumer electronics and power management, operating across a temperature range of -55°C to 150°C. Drive voltages range from 2.5V to 4.5V for optimal Rds(on) performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 1.55V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 10 V |
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