SI1056X-T1-GE3
MOSFET N-CH 20V SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1056X-T1-GE3 is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.32A at 25°C. The Rds(On) is specified at a maximum of 89mOhm when driven at 4.5V with a drain current of 1.32A, with drive voltages ranging from 1.8V to 4.5V for optimal Rds(On) performance. Key electrical characteristics include a maximum gate charge (Qg) of 8.7 nC at 5V and an input capacitance (Ciss) of 400 pF at 10V. The component is housed in a compact SC-89 (SOT-563F) surface-mount package, facilitating dense board layouts. With a maximum power dissipation of 236mW (Ta), it is suitable for use in portable electronics, power management, and automotive systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.32A (Ta) |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 1.32A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V |