SI1056X-T1-E3
MOSFET N-CH 20V 1.32A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI1056X-T1-E3, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 1.32A at 25°C ambient. This device features a low on-resistance of 89mOhm maximum at 1.32A, 4.5V Vgs, and utilizes TrenchFET® technology for enhanced performance. The SI1056X-T1-E3 is housed in a compact SC-89 (SOT-563F) surface-mount package, suitable for space-constrained applications. Drive voltages range from 1.8V to 4.5V, with a maximum gate charge of 8.7nC at 5V. Input capacitance (Ciss) is rated at 400pF maximum at 10V. The device operates across an extended temperature range of -55°C to 150°C. This component finds application in power management and switching circuits across various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.32A (Ta) |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 1.32A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V |
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