SI1054X-T1-E3
MOSFET N-CH 12V 1.32A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1054X-T1-E3 TrenchFET® N-Channel Power MOSFET. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.32A at 25°C. The Rds(on) is specified at a maximum of 95mOhm at 1.32A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 8.57nC (max) at 5V and input capacitance (Ciss) of 480pF (max) at 6V. The device operates with drive voltages ranging from 1.8V to 4.5V and has a maximum gate-source voltage (Vgs) of ±8V. The threshold voltage (Vgs(th)) is 1V (max) at 250µA. This surface mount component is housed in an SC-89 (SOT-563F) package and offers a power dissipation of 236mW (Ta). The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.32A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 1.32A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.57 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 6 V |
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