SI1051X-T1-GE3
MOSFET P-CH 8V 1.2A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1051X-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 1.2A at 25°C, with a maximum power dissipation of 236mW. The on-resistance (Rds On) is specified at a maximum of 122mOhm at 1.2A and 4.5V Vgs. This device supports drive voltages from 1.5V to 4.5V and has a gate charge (Qg) of 9.45nC at 5V. With a maximum Vgs of ±5V and a thermal cutoff voltage (Vgs(th)) of 1V at 250µA, it offers robust gate control. Fabricated using Metal Oxide technology, the SI1051X-T1-GE3 is housed in an SC-89 (SOT-563F) surface mount package. It is suitable for applications in consumer electronics and industrial automation where space-constrained, low-voltage power management is critical. The operating temperature range is -55°C to 150°C. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 1.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 4 V |