SI1050X-T1-GE3
MOSFET N-CH 8V 1.34A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SI1050X-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for efficient power management applications. This component features a 8V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.34A at 25°C, with a maximum power dissipation of 236mW. The device exhibits a low on-resistance (Rds On) of 86mOhm at 1.34A and 4.5V gate-to-source voltage. Key electrical characteristics include a maximum gate charge (Qg) of 11.6 nC at 5V and an input capacitance (Ciss) of 585 pF at 4V. Operating across a temperature range of -55°C to 150°C, it is supplied in a compact SC-89 (SOT-563F) surface mount package, delivered on tape and reel. This MOSFET is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.34A (Ta) |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 1.34A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 4 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
