SI1050X-T1-E3
MOSFET N-CH 8V 1.34A SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1050X-T1-E3 TrenchFET® N-Channel MOSFET. This device features 8 V drain-source breakdown voltage and 1.34 A continuous drain current at 25°C ambient. Key performance parameters include a maximum Rds(on) of 86 mOhm at 1.34 A and 4.5 Vgs, with a gate charge of 11.6 nC at 5 Vgs. Input capacitance (Ciss) is rated at a maximum of 585 pF at 4 Vds. The device is specified for a drive voltage range of 1.5 V to 4.5 V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 236 mW. The SI1050X-T1-E3 is supplied in an SC-89 (SOT-563F) package and is available on tape and reel. This component is commonly employed in consumer electronics and industrial applications requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.34A (Ta) |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 1.34A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 4 V |
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