SI1046X-T1-GE3
MOSFET N-CH 20V SC89-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1046X-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching. This device features a 20V drain-source breakdown voltage and a continuous drain current of 606mA at 25°C. The Rds(on) is specified at a maximum of 420mOhm at 606mA and 4.5V Vgs, with guaranteed performance across a gate drive range of 1.8V to 4.5V. With a maximum power dissipation of 250mW, it is suitable for low-power applications. The SC-89-3 package (SOT-490) facilitates surface mounting. Key electrical characteristics include a gate charge of 1.49nC at 5V Vgs and input capacitance of 66pF at 10V Vds. This component is utilized in various industries including consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 606mA ( Ta) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 606mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.49 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 66 pF @ 10 V |