SI1039X-T1-E3
MOSFET P-CH 12V 870MA SC89-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI1039X-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for applications requiring efficient power switching. This device features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 870mA at 25°C, dissipating up to 170mW (Ta). With a low on-resistance of 165mOhm at 870mA and 4.5V Vgs, it offers excellent conduction efficiency. The gate drive voltage range is specified from 1.8V to 4.5V, and the maximum Gate-Source Voltage (Vgs) is ±8V. The Gate Charge (Qg) is a maximum of 6nC at 4.5V. The SI1039X-T1-E3 is housed in an SC-89 (SOT-563F) surface-mount package and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in portable electronics and power management circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 870mA (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 870mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 170mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
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