SI1037X-T1-GE3
MOSFET P-CH 20V 770MA SC89Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI1037X-T1-GE3, offers a 20V drain-source voltage (Vdss) and 770mA continuous drain current (Id) at 25°C. This device features a low on-resistance of 195mOhm at 770mA and 4.5V Vgs. The SI1037X-T1-GE3 is packaged in an SC-89 (SOT-563F) surface mount configuration and operates within a temperature range of -55°C to 150°C. Its design is suitable for applications in consumer electronics and industrial automation. The gate charge (Qg) is 5.5 nC at 4.5V Vgs, and the threshold voltage (Vgs(th)) is a maximum of 450mV at 250µA. This component is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 770mA (Ta) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 770mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 170mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-89 (SOT-563F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
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