SI1032X-T1-GE3
MOSFET N-CH 20V 200MA SC89-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1032X-T1-GE3, an N-Channel TrenchFET® power MOSFET, offers a 20V drain-source breakdown voltage and a continuous drain current rating of 200mA at 25°C ambient. This device features a low Rds(on) of 5Ohm maximum at 200mA and 4.5V Vgs, with a gate threshold voltage of 1.2V maximum at 250µA. The MOSFET is constructed using advanced TrenchFET® technology for improved performance and efficiency. It supports a wide gate drive voltage range from 1.5V to 4.5V, with a maximum gate-source voltage of ±6V. With a maximum power dissipation of 300mW at 25°C ambient and a gate charge of 0.75nC at 4.5V Vgs, the SI1032X-T1-GE3 is suitable for applications in consumer electronics and portable devices. The component is supplied in a compact SC-89-3 (SOT-490) surface-mount package, delivered on tape and reel. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V |
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