SI1032X-T1-E3
MOSFET N-CH 20V 200MA SC89-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1032X-T1-E3 TrenchFET® N-Channel MOSFET offers a 20V drain-source breakdown voltage and 200mA continuous drain current. This surface mount device, packaged in an SC-89-3 (SOT-490), features a maximum on-resistance of 5 Ohms at 200mA and 4.5V gate-source voltage. The low gate charge of 0.75 nC at 4.5V and a threshold voltage of 1.2V at 250µA make it suitable for low-power switching applications. It operates across a temperature range of -55°C to 150°C and has a power dissipation of 300mW. This component is frequently utilized in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V |
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