SI1032R-T1-E3
MOSFET N-CH 20V 140MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI1032R-T1-E3 TrenchFET® N-Channel MOSFET. This component features a 20V drain-source voltage and a continuous drain current of 140mA at 25°C ambient. The device offers a low on-resistance of 5Ohm maximum at 200mA, 4.5V, with a gate-source voltage range of ±6V and turn-on threshold of 1.2V at 250µA. Drive voltages for optimal Rds(on) are specified between 1.5V and 4.5V. The SC-75A (SOT-416) package provides a 250mW maximum power dissipation at 25°C ambient. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and battery-powered devices where low power consumption is critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V |
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