SI1031X-T1-E3
MOSFET P-CH 20V 155MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1031X-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 155mA at 25°C (Ta), with a maximum power dissipation of 300mW (Ta). The On-Resistance (Rds On) is specified at 8 Ohms maximum at 150mA and 4.5V Vgs. Key parameters include a low Gate Charge (Qg) of 1.5 nC at 4.5V Vgs, and a threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. The operating temperature range is -55°C to 150°C (TJ). Supplied in an SC-75A (SOT-416) package, this component is suitable for surface mounting and is delivered on tape and reel (TR). This MOSFET is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 155mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V |
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