SI1031R-T1-GE3
MOSFET P-CH 20V 140MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1031R-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency switching applications. This device offers a 20V drain-source breakdown voltage and a continuous drain current capability of 140mA at 25°C. With a maximum on-resistance of 8 Ohms at 150mA and 4.5V gate-source voltage, it minimizes conduction losses. The device features a low gate charge of 1.5 nC at 4.5V for improved switching performance. Packaged in an SC-75A (SOT-416) surface-mount format, its 250mW power dissipation capability (Ta) is suitable for portable electronics and consumer devices. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V |
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