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SI1031R-T1-E3

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SI1031R-T1-E3

MOSFET P-CH 20V 140MA SC75A

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI1031R-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 140mA at 25°C. With a maximum power dissipation of 250mW (Ta), it is suitable for applications requiring low power consumption. The device offers a low on-resistance (Rds On) of 8 Ohm maximum at 150mA and 4.5V gate-source voltage. Gate charge (Qg) is rated at 1.5 nC maximum at 4.5V. Operating across a temperature range of -55°C to 150°C (TJ), the SI1031R-T1-E3 is housed in an SC-75A (SOT-416) surface-mount package, supplied on tape and reel. It finds application in various electronic systems, including portable devices and battery-powered equipment.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C140mA (Ta)
Rds On (Max) @ Id, Vgs8Ohm @ 150mA, 4.5V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSC-75A
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±6V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4.5 V

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