SI1022R-T1-E3
MOSFET N-CH 60V 330MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1022R-T1-E3 is a TrenchFET® series N-Channel Power MOSFET. This component features a 60V drain-to-source breakdown voltage and a continuous drain current rating of 330mA at 25°C ambient. The device offers a low on-resistance of 1.25 Ohms maximum at 500mA and 10V Vgs. With a gate charge of 0.6 nC at 4.5V Vgs and input capacitance of 30 pF at 25V Vds, it is suitable for efficient switching applications. The MOSFET is housed in a compact SC-75A (SOT-416) surface-mount package, enabling high-density board designs. Typical applications include power management and signal switching in consumer electronics and industrial control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 330mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 25 V |
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