SI1021R-T1-E3
MOSFET P-CH 60V 190MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1021R-T1-E3 is a P-channel TrenchFET® power MOSFET designed for efficient power switching. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current capability of 190mA at 25°C ambient. With a maximum on-resistance (Rds On) of 4 Ohms at 500mA and 10V Vgs, it offers low conduction losses. The SI1021R-T1-E3 is housed in an SC-75A (SOT-416) surface mount package, suitable for compact designs. Key electrical characteristics include a gate charge of 1.7 nC (typical) and input capacitance of 23 pF. The operating temperature range is -55°C to 150°C. This component is utilized in applications across industrial, automotive, and consumer electronics sectors requiring efficient power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 25 V |
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