SI1013X-T1-GE3
MOSFET P-CH 20V 350MA SC89-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI1013X-T1-GE3. This surface mount device features a 20V drain-source breakdown voltage and a continuous drain current capability of 350mA at 25°C ambient. With a maximum on-resistance of 1.2 Ohms at 350mA and 4.5V gate-source voltage, it offers efficient switching. The gate charge is specified at 1.5 nC maximum at 4.5V. The SC-89-3 package dissipates a maximum of 250mW ambient. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V |
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