SI1013R-T1-E3
MOSFET P-CH 20V 350MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI1013R-T1-E3 is a P-Channel MOSFET designed for surface mount applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 350mA at 25°C. The Rds On is specified at a maximum of 1.2 Ohms at 350mA and 4.5V Vgs. The device operates with a gate-source voltage (Vgs) range of ±6V, and its threshold voltage (Vgs(th)) is a maximum of 450mV at 250µA. With a maximum power dissipation of 150mW (Ta), it is housed in an SC-75A package, also known as SOT-416. The operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in power management circuits, battery-powered devices, and consumer electronics. The SI1013R-T1-E3 is supplied on a tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V |
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