SI1012X-T1-GE3
MOSFET N-CH 20V 500MA SC89-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1012X-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 500mA at 25°C ambient. The Rds(on) is specified at a maximum of 700mOhm at 600mA and 4.5V Vgs. Drive voltages for optimal performance range from 1.8V to 4.5V. The maximum power dissipation is 250mW (Ta) in the SC-89-3 package. Gate Charge (Qg) is rated at 0.75nC maximum at 4.5V Vgs, and the Gate-to-Source Threshold Voltage (Vgs(th)) is 900mV maximum at 250µA. This component is suitable for use in consumer electronics and general-purpose switching applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V |
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