SI1012R-T1-E3
MOSFET N-CH 20V 500MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI1012R-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 500mA at 25°C, with a maximum power dissipation of 150mW. It offers a low on-resistance (Rds On) of 700mOhm at 600mA and 4.5V Vgs. The device utilizes a 4.5V gate drive and has a threshold voltage (Vgs(th)) of 900mV at 250µA. Delivered in a compact SC-75A (SOT-416) surface mount package and supplied on tape and reel, this MOSFET is suitable for use in portable electronics and power management circuits across various industries. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 4.5 V |
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